T430 NPN Darlington Power Transistor


PICP HUB


DESCRIPTION 
  • Collector-Emitter Breakdown Voltage- : 
    • V(BR)CEO= 400V(Min) 
  • High DC Current Gain : 
    • hFE= 800(Min.)@ IB= 4A 
  • Low Collector Saturation Voltage : 
    • VCE(sat)= 1.5V(Max.)@ IC= 3A 

APPLICATIONS 
  • Switching for dynamotor excitation 
  • Automotive ignition 
  • Switching regulator 
  • Motor control applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
  • VCBO = Collector-Base Voltage = 600 V 
  • VCEO = Collector-Emitter Voltage = 400 V 
  • VEBO = Emitter-Base Voltage = 5 V 
  • Ic = Collector Current-Continuous = 10 A 
  • Ib = Base Current-Continuous = 2 A 
  • Pc = Collector Power Dissipation @ TC=25℃ 100 W 
  • Tj = Junction Temperature 150 ℃ 
  • Tstg = Storage Temperature Range -55~150 ℃